{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9806178","patent":{"patent_number":"US-9806178","title":"FinFET structure and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2016-12-09T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method comprises recessing a substrate to form a fin enclosed by an isolation region, wherein the substrate is formed of a first semiconductor material, recessing the fin to form a trench over a lower portion of the fin, growing a second semiconductor material in the trench to form a middle portion of the fin through a first epitaxial process, forming a first carbon doped layer over the lower portion through a second epitaxial process, growing the first semiconductor material over the first carbon doped layer to form an upper portion of the fin through a third epitaxial process, forming a first source/drain region through a fourth epitaxial process, wherein a second carbon doped layer is formed underlying the first source/drain region and applying a thermal oxidation process to the middle portion of the fin to form an oxide outer layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"FinFET structure and method for fabricating the same","description":"A method comprises recessing a substrate to form a fin enclosed by an isolation region, wherein the substrate is formed of a first semiconductor material, recessing the fin to form a trench over a low","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9806178","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9806178","citation_suggestion":"Patentable. \"FinFET structure and method for fabricating the same\" (US-9806178). https://patentable.app/patents/US-9806178","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9806178","json":"https://patentable.app/api/llm-context/US-9806178","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:01:43.351Z"}