{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9806188","patent":{"patent_number":"US-9806188","title":"Method for producing a controllable semiconductor component having trenches with different widths and depths","assignee":null,"inventors":[],"filing_date":"2016-06-03T00:00:00.000Z","publication_date":"2017-10-31T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A controllable semiconductor component is produced by providing a semiconductor body with a top side and a bottom side, and forming a first trench protruding from the top side into the semiconductor body and a second trench protruding from the top side into the semiconductor body. In a common process, an oxide layer is formed in the first trench and in the second trench such that the oxide layer fills the first trench and electrically insulates a surface of the second trench. The oxide layer is removed from the first trench completely or at least partly such that the semiconductor body has an exposed first surface area arranged in the first trench. An electrically conductive material is filled into the second trench, and the semiconductor body and the oxide layer are partially removed such that the electrically conductive material has an exposed second surface area at the bottom side."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for producing a controllable semiconductor component having trenches with different widths and depths","description":"A controllable semiconductor component is produced by providing a semiconductor body with a top side and a bottom side, and forming a first trench protruding from the top side into the semiconductor b","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9806188","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9806188","citation_suggestion":"Patentable. \"Method for producing a controllable semiconductor component having trenches with different widths and depths\" (US-9806188). https://patentable.app/patents/US-9806188","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9806188","json":"https://patentable.app/api/llm-context/US-9806188","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:40:39.730Z"}