{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812190","patent":{"patent_number":"US-9812190","title":"Cell structure of 4T random access memory, random access memory and operation methods","assignee":null,"inventors":[],"filing_date":"2015-04-17T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C","G11C","G11C"],"num_claims":20,"abstract":"The present disclosure provides a cell structure, a random access memory and operation methods. The cell structure with four transistors, including a first N-type transistor, a first P-type transistor, a second N-type transistor and a second P-type transistor, in which an absolute value of a threshold voltage of the first N-type transistor is greater than an absolute value of a threshold voltage of the second N-type transistor, and an absolute value of a threshold voltage of the first P-type transistor is greater than an absolute value of a threshold voltage of the second P-type transistor. The random access memory, including: two identical memory cell arrays including the cell structure with four transistors, a data write circuit and a data read circuit, by using Two Modular Redundancy harden method, and thus reading correctly and avoiding the mistake reversal caused by the single event upset effect."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Cell structure of 4T random access memory, random access memory and operation methods","description":"The present disclosure provides a cell structure, a random access memory and operation methods. The cell structure with four transistors, including a first N-type transistor, a first P-type transistor","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812190","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812190","citation_suggestion":"Patentable. \"Cell structure of 4T random access memory, random access memory and operation methods\" (US-9812190). https://patentable.app/patents/US-9812190","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812190","json":"https://patentable.app/api/llm-context/US-9812190","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:22:04.083Z"}