{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812356","patent":{"patent_number":"US-9812356","title":"Method for manufacturing a semiconductor device","assignee":null,"inventors":[],"filing_date":"2017-01-13T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for manufacturing a semiconductor device includes generating a layout including a first conductive pattern region and a second conductive pattern region. A first interlayer insulating film is formed on a substrate, the first interlayer insulating film including a first region corresponding to the first conductive pattern region, a second region corresponding to the second conductive pattern region, and a third region spaced apart from the first and second regions and disposed between the first and second regions. First, second and third lower metal wirings are formed to respectively fill the first, second and third recesses of the first interlayer insulating film. A second interlayer insulating film is formed on the first interlayer insulating film. A first dummy via hole is formed in the second interlayer insulating film to expose the third lower metal wiring. The third lower metal wiring is electrically isolated."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing a semiconductor device","description":"A method for manufacturing a semiconductor device includes generating a layout including a first conductive pattern region and a second conductive pattern region. A first interlayer insulating film is","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812356","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812356","citation_suggestion":"Patentable. \"Method for manufacturing a semiconductor device\" (US-9812356). https://patentable.app/patents/US-9812356","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812356","json":"https://patentable.app/api/llm-context/US-9812356","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:09:42.812Z"}