{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812357","patent":{"patent_number":"US-9812357","title":"Self-limiting silicide in highly scaled fin technology","assignee":null,"inventors":[],"filing_date":"2016-03-22T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":16,"abstract":"A method of forming a metal semiconductor alloy on a fin structure that includes forming a semiconductor material layer of a polycrystalline crystal structure material or amorphous crystal structure material on a fin structure of a single crystal semiconductor material, and forming a metal including layer on the semiconductor material layer. Metal elements from the metal including layer may then b intermixed metal elements with the semiconductor material layer to provide a metal semiconductor alloy contact on the fin structure. A core of the fin structure of the single crystal semiconductor material is substantially free of the metal elements from the metal including layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Self-limiting silicide in highly scaled fin technology","description":"A method of forming a metal semiconductor alloy on a fin structure that includes forming a semiconductor material layer of a polycrystalline crystal structure material or amorphous crystal structure m","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812357","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812357","citation_suggestion":"Patentable. \"Self-limiting silicide in highly scaled fin technology\" (US-9812357). https://patentable.app/patents/US-9812357","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812357","json":"https://patentable.app/api/llm-context/US-9812357","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:32:03.670Z"}