{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812368","patent":{"patent_number":"US-9812368","title":"Method to prevent lateral epitaxial growth in semiconductor devices","assignee":null,"inventors":[],"filing_date":"2016-10-08T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":9,"abstract":"The method for preventing epitaxial growth in a semiconductor device begins with cutting a set of long fins into a set of fins of a FinFET structure. Each of the set of fins has respective cut faces located at the fin ends of a set of fin ends. A photoresist layer is patterned over the set of fin ends on the set of fins of the FinFET structure. The set of fins are isolated from one another by a first dielectric material. The photoresist is patterned over the set of fin ends so that it differs from the photoresist pattern over other areas of the FinFET structure. A set of dielectric blocks is formed on the set of fin ends using the photoresist pattern. The set of dielectric blocks prevents epitaxial growth at the set of fin ends in a subsequent epitaxial growth step."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method to prevent lateral epitaxial growth in semiconductor devices","description":"The method for preventing epitaxial growth in a semiconductor device begins with cutting a set of long fins into a set of fins of a FinFET structure. Each of the set of fins has respective cut faces l","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812368","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812368","citation_suggestion":"Patentable. \"Method to prevent lateral epitaxial growth in semiconductor devices\" (US-9812368). https://patentable.app/patents/US-9812368","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812368","json":"https://patentable.app/api/llm-context/US-9812368","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:39:55.845Z"}