{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812394","patent":{"patent_number":"US-9812394","title":"Faceted structure formed by self-limiting etch","assignee":null,"inventors":[],"filing_date":"2015-10-12T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":20,"abstract":"An eFuse device on a substrate is formed on a substrate used for an integrated circuit. A semiconductor structure is created from a semiconductor layer deposited over the substrate. A mask layer is patterned over the semiconductor structure such that a first region of the semiconductor structure is exposed and a second region of the semiconductor structure is protected by the mask layer. Next, a self-limiting etch is performed on the exposed areas in the first region of the semiconductor structure, producing a first faceted region of the semiconductor structure in the first region. The semiconductor in the first faceted region has a minimum, nonzero thickness at a point where two semiconductor facet planes meet which is thinner than a thickness of semiconductor in the second region of the semiconductor structure is protected by the mask layer. The first faceted region is used as a link structure in the eFuse device."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Faceted structure formed by self-limiting etch","description":"An eFuse device on a substrate is formed on a substrate used for an integrated circuit. A semiconductor structure is created from a semiconductor layer deposited over the substrate. A mask layer is pa","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812394","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812394","citation_suggestion":"Patentable. \"Faceted structure formed by self-limiting etch\" (US-9812394). https://patentable.app/patents/US-9812394","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812394","json":"https://patentable.app/api/llm-context/US-9812394","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:38:19.867Z"}