{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812445","patent":{"patent_number":"US-9812445","title":"Bipolar junction transistor device having base epitaxy region on etched opening in DARC layer","assignee":null,"inventors":[],"filing_date":"2015-08-18T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":3,"abstract":"A method is provided of forming a bipolar transistor device. The method comprises depositing a collector dielectric layer over a substrate in a collector active region, depositing a dielectric anti-reflective (DARC) layer over the collector dielectric layer, dry etching away a base opening in the DARC layer, and wet etching away a portion of the collector dielectric layer in the base opening to provide an extended base opening to the substrate. The method further comprises performing a base deposition to form a base epitaxy region in the extended base opening and extending over first and second portions of the DARC layer that remains as a result of the dry etching away the base opening in the DARC layer, and forming an emitter region over the base epitaxy region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Bipolar junction transistor device having base epitaxy region on etched opening in DARC layer","description":"A method is provided of forming a bipolar transistor device. The method comprises depositing a collector dielectric layer over a substrate in a collector active region, depositing a dielectric anti-re","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812445","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812445","citation_suggestion":"Patentable. \"Bipolar junction transistor device having base epitaxy region on etched opening in DARC layer\" (US-9812445). https://patentable.app/patents/US-9812445","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812445","json":"https://patentable.app/api/llm-context/US-9812445","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:46:07.837Z"}