{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812489","patent":{"patent_number":"US-9812489","title":"Pixels with photodiodes formed from epitaxial silicon","assignee":null,"inventors":[],"filing_date":"2016-04-19T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"An image sensor may include a plurality of pixels that each contain a photodiode. The pixels may include deep photodiodes for near infrared applications. The photodiodes may be formed by growing doped epitaxial silicon in trenches formed in a substrate. The doped epitaxial silicon may be doped with phosphorus or arsenic. The pixel may include additional n-wells formed by implanting ions in the substrate. Isolation regions formed by implanting boron ions may isolate the n-wells and doped epitaxial silicon. The doped epitaxial silicon may be formed at temperatures between 500° C. and 550° C. After forming the doped epitaxial silicon, laser annealing may be used to activate the ions. Chemical mechanical planarization may also be performed to ensure that the doped epitaxial silicon has a flat and planar surface for subsequent processing."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Pixels with photodiodes formed from epitaxial silicon","description":"An image sensor may include a plurality of pixels that each contain a photodiode. The pixels may include deep photodiodes for near infrared applications. The photodiodes may be formed by growing doped","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812489","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812489","citation_suggestion":"Patentable. \"Pixels with photodiodes formed from epitaxial silicon\" (US-9812489). https://patentable.app/patents/US-9812489","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812489","json":"https://patentable.app/api/llm-context/US-9812489","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:00:41.800Z"}