{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812502","patent":{"patent_number":"US-9812502","title":"Semiconductor memory device having variable resistance elements provided at intersections of wiring lines","assignee":null,"inventors":[],"filing_date":"2016-03-22T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["G11C","G11C","G11C","G11C"],"num_claims":19,"abstract":"According to an embodiment, a semiconductor memory device comprises first wiring lines, second wiring lines, and first variable resistance elements. The first wiring lines are arranged in a first direction and have as their longitudinal direction a second direction intersecting the first direction. The second wiring lines are arranged in the second direction and have the first direction as their longitudinal direction. The first variable resistance elements are respectively provided at intersections of the first wiring lines and the second wiring lines. In addition, this semiconductor memory device comprises a first contact extending in a third direction that intersects the first direction and second direction and having one end thereof connected to the second wiring line. The other end and a surface intersecting the first direction of this first contact are covered by a first conductive layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device having variable resistance elements provided at intersections of wiring lines","description":"According to an embodiment, a semiconductor memory device comprises first wiring lines, second wiring lines, and first variable resistance elements. The first wiring lines are arranged in a first dire","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812502","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812502","citation_suggestion":"Patentable. \"Semiconductor memory device having variable resistance elements provided at intersections of wiring lines\" (US-9812502). https://patentable.app/patents/US-9812502","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812502","json":"https://patentable.app/api/llm-context/US-9812502","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:29:11.239Z"}