{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812539","patent":{"patent_number":"US-9812539","title":"Semiconductor devices having buried contact structures","assignee":null,"inventors":[],"filing_date":"2015-12-08T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":9,"abstract":"Semiconductor devices are provided including a substrate defining a gate trench. A buried gate structure is provided in the gate trench and at least fills the gate trench. The buried gate structure includes a gate insulation layer pattern, a gate electrode and a capping layer pattern. First and second impurity regions are provided at portions of the substrate adjacent to the buried gate structure, respectively. At least a portion of each of the first and second impurity regions face a sidewall of the buried gate structure. First and second buried contact structures are provided on the first and second impurity regions, respectively. Each of the first and second buried contact structures includes a metal silicide pattern and a metal pattern, and at least a portion of each of the first and second buried contact structures face to a sidewall of the buried gate structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices having buried contact structures","description":"Semiconductor devices are provided including a substrate defining a gate trench. A buried gate structure is provided in the gate trench and at least fills the gate trench. The buried gate structure in","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812539","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812539","citation_suggestion":"Patentable. \"Semiconductor devices having buried contact structures\" (US-9812539). https://patentable.app/patents/US-9812539","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812539","json":"https://patentable.app/api/llm-context/US-9812539","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:15:28.206Z"}