{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812543","patent":{"patent_number":"US-9812543","title":"Common metal contact regions having different Schottky barrier heights and methods of manufacturing same","assignee":null,"inventors":[],"filing_date":"2016-03-04T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"Methods for forming a semiconductor device having dual Schottky barrier heights using a single metal and the resulting device are provided. Embodiments include providing a substrate having an n-FET region and a p-FET region, each region including a gate between source/drain regions; applying a mask over the n-FET region; selectively amorphizing a surface of the p-FET region source/drain regions while the n-FET region is masked; removing the mask; depositing a titanium-based metal over the n-FET and p-FET region source/drain regions; and microwave annealing."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Common metal contact regions having different Schottky barrier heights and methods of manufacturing same","description":"Methods for forming a semiconductor device having dual Schottky barrier heights using a single metal and the resulting device are provided. Embodiments include providing a substrate having an n-FET re","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812543","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812543","citation_suggestion":"Patentable. \"Common metal contact regions having different Schottky barrier heights and methods of manufacturing same\" (US-9812543). https://patentable.app/patents/US-9812543","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812543","json":"https://patentable.app/api/llm-context/US-9812543","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:22:38.951Z"}