{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812551","patent":{"patent_number":"US-9812551","title":"Method of forming the gate electrode of field effect transistor","assignee":null,"inventors":[],"filing_date":"2017-02-21T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"This description relates to a method of forming the gate electrode of a semiconductor device, the method including providing a substrate comprising a dummy gate electrode (DGE), a source/drain (S/D) region, a spacer on a dummy gate sidewall, and an isolation feature, depositing a contact etch stop layer (CESL) over the DGE, the S/D region and the spacer, depositing an interlayer dielectric (ILD) layer over the CESL, performing a first chemical mechanical polishing (CMP) to expose the CESL over the DGE, performing a second CMP to expose the DGE, removing an upper portion of the CESL and the spacer, and performing a third CMP to expose the CESL over the S/D region to produce a structure in which an entire top surface of the CESL over the S/D region and isolation feature is substantially co-planar with a top surface of the DGE."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming the gate electrode of field effect transistor","description":"This description relates to a method of forming the gate electrode of a semiconductor device, the method including providing a substrate comprising a dummy gate electrode (DGE), a source/drain (S/D) r","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812551","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812551","citation_suggestion":"Patentable. \"Method of forming the gate electrode of field effect transistor\" (US-9812551). https://patentable.app/patents/US-9812551","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812551","json":"https://patentable.app/api/llm-context/US-9812551","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:31:18.167Z"}