{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812554","patent":{"patent_number":"US-9812554","title":"Method for manufacturing a semiconductor device with increased breakdown voltage","assignee":null,"inventors":[],"filing_date":"2016-01-19T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":8,"abstract":"According to one embodiment, a method for manufacturing a semiconductor device comprises making a first opening, ion-implanting an impurity of a second conductivity type, and forming a third semiconductor layer of the second conductivity type. The first opening is made in a second semiconductor layer. The second semiconductor layer is provided on a first semiconductor layer. The first opening extends in a second direction. A dimension in a third direction of an upper part of the first opening is longer than a dimension in the third direction of a lower part of the first opening. The third direction is perpendicular to the first direction and the second direction. The impurity of the second conductivity type is ion-implanted into a side surface of the lower part of the first opening. The third semiconductor layer of the second conductivity type is formed in an interior of the first opening."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing a semiconductor device with increased breakdown voltage","description":"According to one embodiment, a method for manufacturing a semiconductor device comprises making a first opening, ion-implanting an impurity of a second conductivity type, and forming a third semicondu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812554","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812554","citation_suggestion":"Patentable. \"Method for manufacturing a semiconductor device with increased breakdown voltage\" (US-9812554). https://patentable.app/patents/US-9812554","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812554","json":"https://patentable.app/api/llm-context/US-9812554","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:15:23.377Z"}