{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812555","patent":{"patent_number":"US-9812555","title":"Bottom-gate thin-body transistors for stacked wafer integrated circuits","assignee":null,"inventors":[],"filing_date":"2015-05-28T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":16,"abstract":"An integrated circuit die may include bottom-gate thin-body transistors. The bottom-gate thin-body transistors may be formed in a thinned-down substrate having a thickness that is defined by shallow trench isolation structures that provide complete well isolation for the transistors. The transistors may include gate terminal contacts formed through the shallow trench isolation structures, bulk terminal contacts that are formed through the thinned substrate and that overlap with the gate contacts, and source-drain terminal contacts with in-situ salicide. Additional metallization layers may be formed over the gate/bulk/source-drain contacts after bonding."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Bottom-gate thin-body transistors for stacked wafer integrated circuits","description":"An integrated circuit die may include bottom-gate thin-body transistors. The bottom-gate thin-body transistors may be formed in a thinned-down substrate having a thickness that is defined by shallow t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812555","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812555","citation_suggestion":"Patentable. \"Bottom-gate thin-body transistors for stacked wafer integrated circuits\" (US-9812555). https://patentable.app/patents/US-9812555","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812555","json":"https://patentable.app/api/llm-context/US-9812555","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T12:45:25.689Z"}