{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812563","patent":{"patent_number":"US-9812563","title":"Transistor with field electrodes and improved avalanche breakdown behavior","assignee":null,"inventors":[],"filing_date":"2016-06-14T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":21,"abstract":"A transistor cell includes, in a semiconductor body, a drift region of a first doping type, a source region of the first doping type, a body region of a second doping type, and a drain region of the first doping type. The body region is arranged between the source and drift regions. The drift region is arranged between the body and drain regions. A gate electrode is adjacent the body region and dielectrically insulated from the body region by a gate dielectric, and a field electrode is dielectrically insulated from the drift region by a field electrode dielectric. The drift region includes an avalanche region having a higher doping concentration than sections of the drift region adjacent the avalanche region and which is spaced apart from the field electrode dielectric in a direction perpendicular to the current flow direction. The field electrode is arranged in a needle-shaped trench."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Transistor with field electrodes and improved avalanche breakdown behavior","description":"A transistor cell includes, in a semiconductor body, a drift region of a first doping type, a source region of the first doping type, a body region of a second doping type, and a drain region of the f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812563","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812563","citation_suggestion":"Patentable. \"Transistor with field electrodes and improved avalanche breakdown behavior\" (US-9812563). https://patentable.app/patents/US-9812563","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812563","json":"https://patentable.app/api/llm-context/US-9812563","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:16:55.095Z"}