{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812567","patent":{"patent_number":"US-9812567","title":"Precise control of vertical transistor gate length","assignee":null,"inventors":[],"filing_date":"2016-05-05T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"Transistor and methods of forming the same include forming a channel fin on a bottom source/drain region. A dielectric fill is formed around the channel fin with a gap in an area directly above the channel fin that has a width greater than a width of the channel fin. Spacers are formed in the gap. The dielectric fill is etched away. A gate stack is formed on sidewalls of the channel fin directly underneath the spacers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Precise control of vertical transistor gate length","description":"Transistor and methods of forming the same include forming a channel fin on a bottom source/drain region. A dielectric fill is formed around the channel fin with a gap in an area directly above the ch","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812567","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812567","citation_suggestion":"Patentable. \"Precise control of vertical transistor gate length\" (US-9812567). https://patentable.app/patents/US-9812567","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812567","json":"https://patentable.app/api/llm-context/US-9812567","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:39:08.205Z"}