{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812571","patent":{"patent_number":"US-9812571","title":"Tensile strained high percentage silicon germanium alloy FinFETs","assignee":null,"inventors":[],"filing_date":"2015-09-30T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":13,"abstract":"A thermal mixing process is employed to convert a portion of a silicon germanium alloy fin having a first germanium content and an overlying non-doped epitaxial silicon source material into a silicon germanium alloy source structure having a second germanium content that is less than the first germanium content, to convert another portion of the silicon germanium alloy fin and an overlying non-doped epitaxial silicon drain material into a silicon germanium alloy drain structure having the second germanium content, and to provide a tensile strained silicon germanium alloy fin portion having the first germanium content. A dopant is then introduced into the silicon germanium alloy source structure and into the silicon germanium alloy drain structure."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Tensile strained high percentage silicon germanium alloy FinFETs","description":"A thermal mixing process is employed to convert a portion of a silicon germanium alloy fin having a first germanium content and an overlying non-doped epitaxial silicon source material into a silicon ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812571","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812571","citation_suggestion":"Patentable. \"Tensile strained high percentage silicon germanium alloy FinFETs\" (US-9812571). https://patentable.app/patents/US-9812571","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812571","json":"https://patentable.app/api/llm-context/US-9812571","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:20:01.326Z"}