{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812611","patent":{"patent_number":"US-9812611","title":"Nitride semiconductor ultraviolet light-emitting element and nitride semiconductor ultraviolet light-emitting device","assignee":null,"inventors":[],"filing_date":"2015-04-03T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":17,"abstract":"There is provided a nitride semiconductor ultraviolet light-emitting element capable of efficiently releasing a waste heat generated in an ultraviolet light emitting operation. The nitride semiconductor ultraviolet light-emitting element includes a semiconductor laminated portion 11 having an n-type AlGaN layer 6, an active layer 7 of an AlGaN layer, and p-type AlGaN layers 9 and 10; an n electrode 13; a p electrode 12; a protective insulating film 14, and a first plated electrode 15 formed by a wet plating method and composed of copper or alloy containing copper as a main component. The semiconductor laminated portion 11 is formed in a first region R1, and the p electrode is formed on the portion 11. An upper surface of the n-type AlGaN-based semiconductor layer 6 is exposed in a second region, and the n electrode 13 is formed on the upper surface. The protective insulating film 14 has openings for exposing at least one part of the n electrode 13 and at least one part of the p electrode 12. The first plated electrode 15 is spaced apart from the exposed surface of the n electrode 13 and covers a whole upper surface and a whole outer side surface of the first region R1, and a part of the second region R2 which is in contact with the first region R1. "},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Nitride semiconductor ultraviolet light-emitting element and nitride semiconductor ultraviolet light-emitting device","description":"There is provided a nitride semiconductor ultraviolet light-emitting element capable of efficiently releasing a waste heat generated in an ultraviolet light emitting operation. The nitride semiconduct","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812611","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812611","citation_suggestion":"Patentable. \"Nitride semiconductor ultraviolet light-emitting element and nitride semiconductor ultraviolet light-emitting device\" (US-9812611). https://patentable.app/patents/US-9812611","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812611","json":"https://patentable.app/api/llm-context/US-9812611","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:44:50.185Z"}