{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9812621","patent":{"patent_number":"US-9812621","title":"Semiconductor device and fabrication method for same","assignee":null,"inventors":[],"filing_date":"2012-07-31T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A semiconductor device includes an electrical insulating layer with superior heat resistance, heat dissipation, and durability, and which is manufactured through a process with good cost performance and process performance. In a semiconductor device including a first substrate to which a semiconductor chip is mounted directly or indirectly, and a white insulating layer formed on a surface of the first substrate and functioning as a reflecting material, the semiconductor chip is an LED, at least the surface of the first substrate is made of a metal, and a stacked structure of the white insulating layer and a metal layer is formed by coating a liquid material, which contains SiO2 in the form of nanoparticles and a white inorganic pigment, over the surface of the first substrate and baking the coated liquid material."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and fabrication method for same","description":"A semiconductor device includes an electrical insulating layer with superior heat resistance, heat dissipation, and durability, and which is manufactured through a process with good cost performance a","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9812621","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9812621","citation_suggestion":"Patentable. \"Semiconductor device and fabrication method for same\" (US-9812621). https://patentable.app/patents/US-9812621","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9812621","json":"https://patentable.app/api/llm-context/US-9812621","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:44:06.213Z"}