{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9814143","patent":{"patent_number":"US-9814143","title":"Method of forming pattern with high aspect ratio on polycrystalline aluminum nitride substrate","assignee":null,"inventors":[],"filing_date":"2016-11-28T00:00:00.000Z","publication_date":"2017-11-07T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L"],"num_claims":10,"abstract":"A method of forming a pattern with high aspect ratio on a polycrystalline aluminum nitride substrate comprises the steps of (A) providing an aluminum nitride substrate and forming a barrier layer on the aluminum nitride substrate; (B) etching the barrier layer with an energy beam to form at least one recess in the barrier layer; (C) plasma etching the substrate to deepen the recess into the aluminum nitride substrate; (D) removing the barrier layer to obtain the aluminum nitride substrate having at least one pattern with high aspect ratio. The method uses the energy beam to directly form a pattern on the barrier layer, and further employs plasma etching to prepare the aluminum nitride substrate having a pattern with high aspect ratio quickly and effectively."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method of forming pattern with high aspect ratio on polycrystalline aluminum nitride substrate","description":"A method of forming a pattern with high aspect ratio on a polycrystalline aluminum nitride substrate comprises the steps of (A) providing an aluminum nitride substrate and forming a barrier layer on t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9814143","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9814143","citation_suggestion":"Patentable. \"Method of forming pattern with high aspect ratio on polycrystalline aluminum nitride substrate\" (US-9814143). https://patentable.app/patents/US-9814143","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9814143","json":"https://patentable.app/api/llm-context/US-9814143","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:31:38.157Z"}