{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9818606","patent":{"patent_number":"US-9818606","title":"Amorphous silicon thickness uniformity improved by process diluted with hydrogen and argon gas mixture","assignee":null,"inventors":[],"filing_date":"2014-05-19T00:00:00.000Z","publication_date":"2017-11-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"The embodiments described herein generally relate to methods for forming an amorphous silicon structure that may be used in thin film transistor devices. In embodiments disclosed herein, the amorphous silicon layer is deposited using a silicon-based gas with an activation gas comprising a high concentration of inert gas and a low concentration of hydrogen-based gas. The activation gas combination allows for a good deposition profile of the amorphous silicon layer from the edge of the shadow frame which is translated to the polycrystalline silicon layer post-annealing."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Amorphous silicon thickness uniformity improved by process diluted with hydrogen and argon gas mixture","description":"The embodiments described herein generally relate to methods for forming an amorphous silicon structure that may be used in thin film transistor devices. In embodiments disclosed herein, the amorphous","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9818606","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9818606","citation_suggestion":"Patentable. \"Amorphous silicon thickness uniformity improved by process diluted with hydrogen and argon gas mixture\" (US-9818606). https://patentable.app/patents/US-9818606","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9818606","json":"https://patentable.app/api/llm-context/US-9818606","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:21:31.016Z"}