{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9818638","patent":{"patent_number":"US-9818638","title":"Manufacturing method of semiconductor device","assignee":null,"inventors":[],"filing_date":"2017-04-18T00:00:00.000Z","publication_date":"2017-11-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of forming a semiconductor device includes forming a low-k dielectric layer over a substrate and forming a first dielectric layer on the low-k dielectric layer. A first metal hard mask layer is formed on the first dielectric layer, and a second dielectric layer is formed on the first metal hard mask layer. A second metal hard mask layer is formed on the second dielectric layer, and a first trench opening is formed in the second metal hard mask layer and the second dielectric layer exposing the first metal hard mask layer. A first via opening is formed in the exposed first metal hard mask layer in the first trench opening, and the first trench opening and first via opening are extended into the low-k dielectric layer to form a first trench and a first via."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of semiconductor device","description":"A method of forming a semiconductor device includes forming a low-k dielectric layer over a substrate and forming a first dielectric layer on the low-k dielectric layer. A first metal hard mask layer ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9818638","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9818638","citation_suggestion":"Patentable. \"Manufacturing method of semiconductor device\" (US-9818638). https://patentable.app/patents/US-9818638","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9818638","json":"https://patentable.app/api/llm-context/US-9818638","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:11:11.776Z"}