{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9818657","patent":{"patent_number":"US-9818657","title":"Dry etching method and method of manufacturing semiconductor device","assignee":null,"inventors":[],"filing_date":"2013-06-21T00:00:00.000Z","publication_date":"2017-11-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":7,"abstract":"A first etching rate of the first conductive film is calculated by acquiring correlation between an opening ratio of an etching mask and an etching rate of an etching target film, and then, performing a first dry etching to a first conductive film formed on a first wafer. Next, a second etching mask is formed on a second conductive film formed on a second wafer, and an etching time of the second conductive film is determined from the correlation between the opening ratio and the etching rate, the first etching rate, and a film thickness of the second conductive film when the second conductive film is subjected to a second dry etching in time-controlled etching."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Dry etching method and method of manufacturing semiconductor device","description":"A first etching rate of the first conductive film is calculated by acquiring correlation between an opening ratio of an etching mask and an etching rate of an etching target film, and then, performing","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9818657","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9818657","citation_suggestion":"Patentable. \"Dry etching method and method of manufacturing semiconductor device\" (US-9818657). https://patentable.app/patents/US-9818657","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9818657","json":"https://patentable.app/api/llm-context/US-9818657","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:58:12.714Z"}