{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9818692","patent":{"patent_number":"US-9818692","title":"GaN semiconductor device structure and method of fabrication by substrate replacement","assignee":null,"inventors":[],"filing_date":"2016-03-23T00:00:00.000Z","publication_date":"2017-11-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"Devices and systems comprising high current/high voltage GaN semiconductor devices are disclosed. A GaN die, comprising a lateral GaN transistor, is sandwiched between an overlying header and an underlying composite thermal dielectric layer. Fabrication comprises providing a conventional GaN device structure fabricated on a low cost silicon substrate (GaN-on-Si die), mechanically and electrically attaching source, drain and gate contact pads of the GaN-on-Si die to corresponding contact areas of conductive tracks of the header, then entirely removing the silicon substrate. The exposed substrate-surface of the epi-layer stack is coated with the composite dielectric thermal layer. Preferably, the header comprises a ceramic dielectric support layer having a CTE matched to the GaN epi-layer stack. The thermal dielectric layer comprises a high dielectric strength thermoplastic polymer and a dielectric filler having a high thermal conductivity. This structure offers improved electrical breakdown resistance and effective thermal dissipation compared to conventional GaN-on-Si device structures."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"GaN semiconductor device structure and method of fabrication by substrate replacement","description":"Devices and systems comprising high current/high voltage GaN semiconductor devices are disclosed. A GaN die, comprising a lateral GaN transistor, is sandwiched between an overlying header and an under","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9818692","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9818692","citation_suggestion":"Patentable. \"GaN semiconductor device structure and method of fabrication by substrate replacement\" (US-9818692). https://patentable.app/patents/US-9818692","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9818692","json":"https://patentable.app/api/llm-context/US-9818692","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:58:46.704Z"}