{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9818742","patent":{"patent_number":"US-9818742","title":"Semiconductor device isolation using an aligned diffusion and polysilicon field plate","assignee":null,"inventors":[],"filing_date":"2012-05-11T00:00:00.000Z","publication_date":"2017-11-14T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"An isolation structure prevents inter-device and intra-device leakage in first and second adjacent semiconductor devices in a substrate. The first and second semiconductor devices each include a gate region and at least one active region. A first channel stop region is configured to surround the first semiconductor device. A second channel stop region is configured to surround the second semiconductor device. A first field plate is located above at least part of the first channel stop region, and overlaps the gate region of the first semiconductor device in a first overlap region. A second field plate is located above at least part of the second channel stop region, and overlaps the gate region of the second semiconductor device in a second overlap region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device isolation using an aligned diffusion and polysilicon field plate","description":"An isolation structure prevents inter-device and intra-device leakage in first and second adjacent semiconductor devices in a substrate. The first and second semiconductor devices each include a gate ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9818742","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9818742","citation_suggestion":"Patentable. \"Semiconductor device isolation using an aligned diffusion and polysilicon field plate\" (US-9818742). https://patentable.app/patents/US-9818742","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9818742","json":"https://patentable.app/api/llm-context/US-9818742","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:45:17.408Z"}