{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9818753","patent":{"patent_number":"US-9818753","title":"Semiconductor memory device and method for manufacturing the same","assignee":null,"inventors":[],"filing_date":"2016-03-08T00:00:00.000Z","publication_date":"2017-11-14T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":19,"abstract":"In general, according to one embodiment, a semiconductor memory device includes a first conductive layer, a second conductive layer, a first sub-conductive layer, a first insulating film. One portion of the first conductive layer overlaps at least one portion of the first sub-conductive layer in the first direction. One other portion of the first conductive layer overlaps at least one portion of the second conductive layer in the first direction. One portion of the first insulating film overlaps at least one portion of the second conductive layer in the second direction. The One portion of the first insulating film overlaps one portion of the first sub-conductive layer in the second direction. The second conductive layer overlap one other portion of the first insulating film in a direction intersecting the second direction."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor memory device and method for manufacturing the same","description":"In general, according to one embodiment, a semiconductor memory device includes a first conductive layer, a second conductive layer, a first sub-conductive layer, a first insulating film. One portion ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9818753","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9818753","citation_suggestion":"Patentable. \"Semiconductor memory device and method for manufacturing the same\" (US-9818753). https://patentable.app/patents/US-9818753","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9818753","json":"https://patentable.app/api/llm-context/US-9818753","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T06:20:51.585Z"}