{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9818756","patent":{"patent_number":"US-9818756","title":"Methods of forming a charge-retaining transistor having selectively-formed islands of charge-trapping material within a lateral recess","assignee":null,"inventors":[],"filing_date":"2015-09-08T00:00:00.000Z","publication_date":"2017-11-14T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":24,"abstract":"A charge-retaining transistor includes a control gate and an inter-gate dielectric alongside the control gate. A charge-storage node of the transistor includes first semiconductor material alongside the inter-gate dielectric. Islands of charge-trapping material are alongside the first semiconductor material. An oxidation-protective material is alongside the islands. Second semiconductor material is alongside the oxidation-protective material, and is of some different composition from that of the oxidation-protective material. Tunnel dielectric is alongside the charge-storage node. Channel material is alongside the tunnel dielectric. Additional embodiments, including methods, are disclosed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming a charge-retaining transistor having selectively-formed islands of charge-trapping material within a lateral recess","description":"A charge-retaining transistor includes a control gate and an inter-gate dielectric alongside the control gate. A charge-storage node of the transistor includes first semiconductor material alongside t","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9818756","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9818756","citation_suggestion":"Patentable. \"Methods of forming a charge-retaining transistor having selectively-formed islands of charge-trapping material within a lateral recess\" (US-9818756). https://patentable.app/patents/US-9818756","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9818756","json":"https://patentable.app/api/llm-context/US-9818756","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:33:44.480Z"}