{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9818760","patent":{"patent_number":"US-9818760","title":"Memory structure, method of operating the same, and method of manufacturing the same","assignee":null,"inventors":[],"filing_date":"2017-03-20T00:00:00.000Z","publication_date":"2017-11-14T00:00:00.000Z","cpc_codes":["G11C","G11C"],"num_claims":20,"abstract":"A memory structure includes stacks, memory layers, channel layers, dielectric layers, and first conductive lines. Each stack includes a group of alternating conductive strips and insulating strips. The memory layers are conformally disposed on the stacks. The channel layers are conformally disposed on the memory layers. The dielectric layers are disposed on portions of the channel layers at first sides of the stacks and portions of the channel layers at second sides of the stacks. The first conductive lines are disposed along sidewalls of the stacks. The first conductive lines are isolated from the channel layers by the dielectric layers. One first conductive line disposed at the first side of one stack is isolated from one first conductive line disposed at the second side of the same stack and isolated from one first conductive line disposed at the second side of an adjacent stack."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Memory structure, method of operating the same, and method of manufacturing the same","description":"A memory structure includes stacks, memory layers, channel layers, dielectric layers, and first conductive lines. Each stack includes a group of alternating conductive strips and insulating strips. Th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9818760","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9818760","citation_suggestion":"Patentable. \"Memory structure, method of operating the same, and method of manufacturing the same\" (US-9818760). https://patentable.app/patents/US-9818760","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9818760","json":"https://patentable.app/api/llm-context/US-9818760","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:21:34.029Z"}