{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9818798","patent":{"patent_number":"US-9818798","title":"Vertical thin film transistors in non-volatile storage systems","assignee":null,"inventors":[],"filing_date":"2016-06-03T00:00:00.000Z","publication_date":"2017-11-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"Three-dimensional (3D) non-volatile memory arrays having a vertically-oriented thin film transistor (TFT) select device and method of fabricating are described. The vertically-oriented TFT may be used as a vertical bit line selection device to couple a global bit line to a vertical bit line. A select device pillar includes a body and upper and lower source/drain regions. At least one gate is separated horizontally from the select device pillar by a gate dielectric. Each gate is formed over the gate dielectric and a base that extends horizontally at least partially between adjacent pillars. The base is formed with notches filled with the gate dielectric. The select device is fabricated using a conformally deposited base dielectric material and conformal hard mask layer that is formed with a larger bottom thickness than horizontal thickness. The base thickness is defined by the deposition thickness, rather than an uncontrolled etch back."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Vertical thin film transistors in non-volatile storage systems","description":"Three-dimensional (3D) non-volatile memory arrays having a vertically-oriented thin film transistor (TFT) select device and method of fabricating are described. The vertically-oriented TFT may be used","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9818798","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9818798","citation_suggestion":"Patentable. \"Vertical thin film transistors in non-volatile storage systems\" (US-9818798). https://patentable.app/patents/US-9818798","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9818798","json":"https://patentable.app/api/llm-context/US-9818798","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:02:25.312Z"}