{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9818801","patent":{"patent_number":"US-9818801","title":"Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereof","assignee":null,"inventors":[],"filing_date":"2016-10-14T00:00:00.000Z","publication_date":"2017-11-14T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":13,"abstract":"A three-dimensional resistive memory device includes an alternating stack of electrically conductive layers and insulating layers. Resistive memory elements are provided between the electrically conductive layers and a semiconductor local bit line. The semiconductor local bit line includes a heterostructure of an inner semiconductor material layer having an inner-material band gap and an outer semiconductor material layer having an outer-material band gap that is narrower than the inner-material band. A gate dielectric is located between a gate electrode and the inner semiconductor material layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereof","description":"A three-dimensional resistive memory device includes an alternating stack of electrically conductive layers and insulating layers. Resistive memory elements are provided between the electrically condu","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9818801","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9818801","citation_suggestion":"Patentable. \"Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereof\" (US-9818801). https://patentable.app/patents/US-9818801","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9818801","json":"https://patentable.app/api/llm-context/US-9818801","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:19:17.080Z"}