{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9818818","patent":{"patent_number":"US-9818818","title":"Power semiconductor device including trench gate structures with longitudinal axes tilted to a main crystal direction","assignee":null,"inventors":[],"filing_date":"2016-03-01T00:00:00.000Z","publication_date":"2017-11-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":15,"abstract":"A semiconductor device includes a semiconductor body with a first main crystal direction parallel to a horizontal plane. Longitudinal axes of trench gate structures are tilted to the first main crystal direction by a tilt angle of at least 2 degree and at most 30 degree in the horizontal plane. Mesa portions are between neighboring trench gate structures. First sidewall sections of first mesa sidewalls are main crystal planes parallel to the first main crystal direction. Second sidewall sections tilted to the first sidewall sections connect the first sidewall sections."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Power semiconductor device including trench gate structures with longitudinal axes tilted to a main crystal direction","description":"A semiconductor device includes a semiconductor body with a first main crystal direction parallel to a horizontal plane. Longitudinal axes of trench gate structures are tilted to the first main crysta","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9818818","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9818818","citation_suggestion":"Patentable. \"Power semiconductor device including trench gate structures with longitudinal axes tilted to a main crystal direction\" (US-9818818). https://patentable.app/patents/US-9818818","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9818818","json":"https://patentable.app/api/llm-context/US-9818818","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T09:31:42.937Z"}