{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9818831","patent":{"patent_number":"US-9818831","title":"DMOS transistor including a gate dielectric having a non-uniform thickness","assignee":null,"inventors":[],"filing_date":"2013-03-11T00:00:00.000Z","publication_date":"2017-11-14T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":13,"abstract":"An electronic device can include a transistor having a drain region, a source region, a dielectric layer, and a gate electrode. The dielectric layer can have a first portion and a second portion, wherein the first portion is relatively thicker and closer to the drain region; the second portion is relatively thinner and closer to the source region. The gate electrode of the transistor can overlie the first and second portions of the dielectric layer. In another aspect, an electronic device can be formed using two different dielectric layers having different thicknesses. A gate electrode within the electronic device can be formed over portions of the two different dielectric layers. The process can eliminate masking and doping steps that may be otherwise used to keep the drain dopant concentration closer to the concentration as originally formed."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"DMOS transistor including a gate dielectric having a non-uniform thickness","description":"An electronic device can include a transistor having a drain region, a source region, a dielectric layer, and a gate electrode. The dielectric layer can have a first portion and a second portion, wher","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9818831","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9818831","citation_suggestion":"Patentable. \"DMOS transistor including a gate dielectric having a non-uniform thickness\" (US-9818831). https://patentable.app/patents/US-9818831","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9818831","json":"https://patentable.app/api/llm-context/US-9818831","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:40:26.646Z"}