{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9818834","patent":{"patent_number":"US-9818834","title":"Semiconductor device structure and method for forming the same","assignee":null,"inventors":[],"filing_date":"2016-01-07T00:00:00.000Z","publication_date":"2017-11-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for forming a semiconductor device structure is provided. The method includes forming a gate stack, a spacer layer, and a dielectric layer over a substrate. The method includes removing a first portion of the dielectric layer to form a first hole in the dielectric layer. A second portion of the dielectric layer is under the first hole. The method includes forming a first protection layer over the gate stack and the spacer layer. The method includes forming a second protection layer over the first protection layer. The second protection layer includes a metal compound material, and the first protection layer and the second protection layer includes a same metal element. The method includes removing the second portion of the dielectric layer to form a through hole. The method includes forming a conductive contact structure in the through hole."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device structure and method for forming the same","description":"A method for forming a semiconductor device structure is provided. The method includes forming a gate stack, a spacer layer, and a dielectric layer over a substrate. The method includes removing a fir","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9818834","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9818834","citation_suggestion":"Patentable. \"Semiconductor device structure and method for forming the same\" (US-9818834). https://patentable.app/patents/US-9818834","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9818834","json":"https://patentable.app/api/llm-context/US-9818834","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:01:25.519Z"}