{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9818843","patent":{"patent_number":"US-9818843","title":"Transistor having dual work function buried gate electrode and method for fabricating the same","assignee":null,"inventors":[],"filing_date":"2016-11-17T00:00:00.000Z","publication_date":"2017-11-14T00:00:00.000Z","cpc_codes":["H01L","H01L"],"num_claims":7,"abstract":"A transistor having a source region and a drain region which are separately formed in a substrate, a trench which is defined in the substrate between the source region and the drain region, and a gate electrode which is formed in the trench. The gate electrode includes a first electrode buried over a bottom of the trench; a second electrode formed over the first electrode; and a liner electrode having an interface part which is positioned between the first electrode and the second electrode and a side part, which is positioned on sidewalls of the second electrode and overlaps with the source region and the drain region."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Transistor having dual work function buried gate electrode and method for fabricating the same","description":"A transistor having a source region and a drain region which are separately formed in a substrate, a trench which is defined in the substrate between the source region and the drain region, and a gate","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9818843","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9818843","citation_suggestion":"Patentable. \"Transistor having dual work function buried gate electrode and method for fabricating the same\" (US-9818843). https://patentable.app/patents/US-9818843","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9818843","json":"https://patentable.app/api/llm-context/US-9818843","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T16:30:49.920Z"}