{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9818849","patent":{"patent_number":"US-9818849","title":"Manufacturing method of semiconductor device with conductive film in opening through multiple insulating films","assignee":null,"inventors":[],"filing_date":"2014-10-29T00:00:00.000Z","publication_date":"2017-11-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":14,"abstract":"A first insulating film in contact with an oxide semiconductor film and a second insulating film are stacked in this order over an electrode film of a transistor including the oxide semiconductor film, an etching mask is formed over the second insulating film, an opening portion exposing the electrode film is formed by etching a portion of the first insulating film and a portion of the second insulating film, the opening portion exposing the electrode film is exposed to argon plasma, the etching mask is removed, and a conductive film is formed in the opening portion exposing the electrode film. The first insulating film is an insulating film whose oxygen is partly released by heating. The second insulating film is less easily etched than the first insulating film and has a lower gas-permeability than the first insulating film."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Manufacturing method of semiconductor device with conductive film in opening through multiple insulating films","description":"A first insulating film in contact with an oxide semiconductor film and a second insulating film are stacked in this order over an electrode film of a transistor including the oxide semiconductor film","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9818849","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9818849","citation_suggestion":"Patentable. \"Manufacturing method of semiconductor device with conductive film in opening through multiple insulating films\" (US-9818849). https://patentable.app/patents/US-9818849","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9818849","json":"https://patentable.app/api/llm-context/US-9818849","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:23:48.868Z"}