{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9818852","patent":{"patent_number":"US-9818852","title":"Semiconductor device and semiconductor device manufacturing method","assignee":null,"inventors":[],"filing_date":"2016-03-30T00:00:00.000Z","publication_date":"2017-11-14T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":11,"abstract":"In some aspects of the invention, an n-type field-stop layer can have a total impurity of such an extent that a depletion layer spreading in response to an application of a rated voltage stops inside the n-type field-stop layer together with the total impurity of an n− type drift layer. Also, the n-type field-stop layer can have a concentration gradient such that the impurity concentration of the n-type field-stop layer decreases from a p+ type collector layer toward a p-type base layer, and the diffusion depth is 20 μm or more. Furthermore, an n+ type buffer layer of which the peak impurity concentration can be higher than that of the n-type field-stop layer at 6×1015 cm−3 or more, and one-tenth or less of the peak impurity concentration of the p+ type collector layer, can be included between the n-type field-stop layer and p+ type collector layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and semiconductor device manufacturing method","description":"In some aspects of the invention, an n-type field-stop layer can have a total impurity of such an extent that a depletion layer spreading in response to an application of a rated voltage stops inside ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9818852","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9818852","citation_suggestion":"Patentable. \"Semiconductor device and semiconductor device manufacturing method\" (US-9818852). https://patentable.app/patents/US-9818852","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9818852","json":"https://patentable.app/api/llm-context/US-9818852","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:17:48.893Z"}