{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9818873","patent":{"patent_number":"US-9818873","title":"Forming stressed epitaxial layers between gates separated by different pitches","assignee":null,"inventors":[],"filing_date":"2015-10-09T00:00:00.000Z","publication_date":"2017-11-14T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":14,"abstract":"Various embodiments include methods and integrated circuit structures. In some cases, a method of forming an integrated circuit structure can include: forming a doped silicon layer over a substrate; forming a plurality of fin structures from the doped silicon layer; forming a plurality of gate structures over the plurality of fin structures, each of the plurality of gate structures separated from a neighboring gate structure by a first pitch; forming a mask over the plurality of gate structures, exposing at least one of the plurality of gate structures; removing the at least one of the plurality of gate structures, wherein two of the remaining gate structures after the removing are separated by a second pitch larger than the first pitch; and forming an epitaxial region over the substrate between the two of the remaining gate structures."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Forming stressed epitaxial layers between gates separated by different pitches","description":"Various embodiments include methods and integrated circuit structures. In some cases, a method of forming an integrated circuit structure can include: forming a doped silicon layer over a substrate; f","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9818873","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9818873","citation_suggestion":"Patentable. \"Forming stressed epitaxial layers between gates separated by different pitches\" (US-9818873). https://patentable.app/patents/US-9818873","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9818873","json":"https://patentable.app/api/llm-context/US-9818873","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:33:34.118Z"}