{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9824888","patent":{"patent_number":"US-9824888","title":"Oxide semiconductor film and formation method thereof","assignee":null,"inventors":[],"filing_date":"2014-05-15T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":12,"abstract":"To provide a crystalline oxide semiconductor film. By collision of ions with a target including a crystalline In—Ga—Zn oxide, a flat-plate-like In—Ga—Zn oxide is separated. In the flat-plate-like In—Ga—Zn oxide, a first layer including a gallium atom, a zinc atom, and an oxygen atom, a second layer including a zinc atom and an oxygen atom, a third layer including an indium atom and an oxygen atom, and a fourth layer including a gallium atom, a zinc atom, and an oxygen atom are stacked in this order. After the flat-plate-like In—Ga—Zn oxide is deposited over a substrate while maintaining the crystallinity, the second layer is gasified and exhausted."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Oxide semiconductor film and formation method thereof","description":"To provide a crystalline oxide semiconductor film. By collision of ions with a target including a crystalline In—Ga—Zn oxide, a flat-plate-like In—Ga—Zn oxide is separated. In the flat-plate-like In—G","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9824888","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9824888","citation_suggestion":"Patentable. \"Oxide semiconductor film and formation method thereof\" (US-9824888). https://patentable.app/patents/US-9824888","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9824888","json":"https://patentable.app/api/llm-context/US-9824888","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:15:39.679Z"}