{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9824913","patent":{"patent_number":"US-9824913","title":"Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage BCD process","assignee":null,"inventors":[],"filing_date":"2013-03-29T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":10,"abstract":"The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate having a first type of doping; an epitaxial layer having a second type of doping over the semiconductor substrate, wherein the first type of doping is opposite to the second type of doping; an isolation region having the first type of doping, wherein the isolation region extends through the epitaxial layer into the semiconductor substrate, and wherein the isolation region has a doping concentration on the same order as a doping concentration of the epitaxial layer; a field oxide layer over the isolation region. This invention effectively isolates the epitaxial island where the BCD high-voltage device is located, thereby increasing the breakdown voltage of the high-voltage device in the BCD process. Further, with a minimum thickness of the field oxide layer, the parasitical threshold voltage between the aluminum wiring and the silicon surface of the high-voltage device can be higher than 1200V, thereby improving the planarization of oxide layer steps on the silicon surface in the whole high-voltage BCD process, and enhancing the reliability of the product."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage BCD process","description":"The invention provides an isolation structure and a manufacturing method thereof for a high-voltage device in a high-voltage BCD process, the isolation structure comprising: a semiconductor substrate ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9824913","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9824913","citation_suggestion":"Patentable. \"Isolation structure and manufacturing method thereof for high-voltage device in a high-voltage BCD process\" (US-9824913). https://patentable.app/patents/US-9824913","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9824913","json":"https://patentable.app/api/llm-context/US-9824913","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:59:31.937Z"}