{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9824914","patent":{"patent_number":"US-9824914","title":"Method for manufacturing a device isolation structure","assignee":null,"inventors":[],"filing_date":"2017-02-21T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L"],"num_claims":6,"abstract":"A method for forming a semiconductor device includes forming a buried doped layer in a semiconductor substrate and forming a plurality of first trenches that expose the buried doped layer. A first dielectric layer is formed covering sidewalls of the first trenches, and a doped polysilicon layer is formed covering side surfaces of the first dielectric layer and bottom portions of the first trenches. The method also includes forming a second trench in each of the plurality of first trenches, and each second trench extending through a bottom portion of the doped polysilicon layer and the buried doped layer into a lower portion of the substrate. The method also includes forming a second dielectric layer inside each second trench. An isolation pocket structure is formed that includes the doped buried layer at the bottom and sidewalls that includes the doped polysilicon layer sandwiched between the first and second dielectric layers."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for manufacturing a device isolation structure","description":"A method for forming a semiconductor device includes forming a buried doped layer in a semiconductor substrate and forming a plurality of first trenches that expose the buried doped layer. A first die","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9824914","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9824914","citation_suggestion":"Patentable. \"Method for manufacturing a device isolation structure\" (US-9824914). https://patentable.app/patents/US-9824914","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9824914","json":"https://patentable.app/api/llm-context/US-9824914","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T05:15:05.273Z"}