{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9824918","patent":{"patent_number":"US-9824918","title":"Method for electromigration and adhesion using two selective deposition","assignee":null,"inventors":[],"filing_date":"2013-12-31T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":19,"abstract":"A method of manufacturing a semiconductor device includes providing a semiconductor substrate, sequentially forming an etch stop layer and an interlayer dielectric layer on the semiconductor substrate, forming a copper metal interconnect structure in the interlayer dielectric layer, forming a copper layer in the copper metal interconnect structure, forming a cobalt layer on the copper layer, and forming an aluminum nitride layer on the cobalt layer. The stack of cobalt layer and copper layer effectively suppresses electromigration caused by diffusion of the copper layer into the interlayer dielectric layer, improves the adhesion between the copper layer and the etch stop layer, and prevents delamination."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Method for electromigration and adhesion using two selective deposition","description":"A method of manufacturing a semiconductor device includes providing a semiconductor substrate, sequentially forming an etch stop layer and an interlayer dielectric layer on the semiconductor substrate","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9824918","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9824918","citation_suggestion":"Patentable. \"Method for electromigration and adhesion using two selective deposition\" (US-9824918). https://patentable.app/patents/US-9824918","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9824918","json":"https://patentable.app/api/llm-context/US-9824918","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T19:29:12.235Z"}