{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9824920","patent":{"patent_number":"US-9824920","title":"Methods of forming self-aligned contact structures by work function material layer recessing and the resulting devices","assignee":null,"inventors":[],"filing_date":"2016-04-04T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"One method disclosed includes, among other things, forming a first plurality of gate cavities in a first dielectric layer. A work function material layer is formed in the first plurality of gate cavities. A first conductive material is formed in at least a subset of the first plurality of gate cavities above the work function material layer to define a first plurality of gate structures. A first contact recess is formed in the first dielectric layer between two of the first plurality of gate structures. A second conductive material is formed in the first contact recess. The work function material layer is recessed selectively to the first and second conductive materials to define a plurality of cap recesses. A cap layer is formed in the plurality of cap recesses."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming self-aligned contact structures by work function material layer recessing and the resulting devices","description":"One method disclosed includes, among other things, forming a first plurality of gate cavities in a first dielectric layer. A work function material layer is formed in the first plurality of gate cavit","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9824920","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9824920","citation_suggestion":"Patentable. \"Methods of forming self-aligned contact structures by work function material layer recessing and the resulting devices\" (US-9824920). https://patentable.app/patents/US-9824920","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9824920","json":"https://patentable.app/api/llm-context/US-9824920","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T03:56:45.304Z"}