{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9824923","patent":{"patent_number":"US-9824923","title":"Semiconductor device and method of forming conductive pillar having an expanded base","assignee":null,"inventors":[],"filing_date":"2012-05-10T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":18,"abstract":"A semiconductor device has a first semiconductor die and conductive vias in the first semiconductor die. The conductive vias can be formed by extending the vias partially through a first surface of the first semiconductor die. A portion of a second surface of the first semiconductor die is removed to expose the conductive vias. A plurality of conductive pillars is formed over the first surface the first semiconductor die. The conductive pillars include an expanded base electrically connected to the conductive vias. A width of the expanded base of the conductive pillars is greater than a width of a body of the conductive pillars. A conductive layer is formed over a second surface of the first semiconductor die. The conductive layer is electrically connected to the conductive vias. A second semiconductor die is mounted to the first semiconductor die with a second conductive pillar having an expanded base."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor device and method of forming conductive pillar having an expanded base","description":"A semiconductor device has a first semiconductor die and conductive vias in the first semiconductor die. The conductive vias can be formed by extending the vias partially through a first surface of th","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9824923","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9824923","citation_suggestion":"Patentable. \"Semiconductor device and method of forming conductive pillar having an expanded base\" (US-9824923). https://patentable.app/patents/US-9824923","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9824923","json":"https://patentable.app/api/llm-context/US-9824923","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T08:21:26.602Z"}