{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9824935","patent":{"patent_number":"US-9824935","title":"Methods of forming NMOS and PMOS FinFET devices and the resulting product","assignee":null,"inventors":[],"filing_date":"2017-07-06T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L"],"num_claims":15,"abstract":"A method includes forming an initial strain relaxed buffer layer on a semiconductor substrate. A trench is formed within the initial strain relaxed buffer layer. An epitaxial deposition process is performed to form an in situ carbon-doped strain relaxed buffer layer in the trench. A channel semiconductor material is formed on the initial strain relaxed buffer layer and on the in situ carbon-doped strain relaxed buffer layer in the trench. A plurality of fin-formation trenches that extend into the initial strain relaxed buffer layer is formed so as to thereby form an NMOS fin including the channel semiconductor material and the in situ carbon-doped strain relaxed buffer layer and a PMOS fin including the channel semiconductor material and the initial strain relaxed buffer layer. A recessed layer of insulating material and gate structures are formed around the NMOS fin and the PMOS fin."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming NMOS and PMOS FinFET devices and the resulting product","description":"A method includes forming an initial strain relaxed buffer layer on a semiconductor substrate. A trench is formed within the initial strain relaxed buffer layer. An epitaxial deposition process is per","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9824935","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9824935","citation_suggestion":"Patentable. \"Methods of forming NMOS and PMOS FinFET devices and the resulting product\" (US-9824935). https://patentable.app/patents/US-9824935","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9824935","json":"https://patentable.app/api/llm-context/US-9824935","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T04:56:26.848Z"}