{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9824937","patent":{"patent_number":"US-9824937","title":"Flowable CVD quality control in STI loop","assignee":null,"inventors":[],"filing_date":"2016-08-31T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A method for semiconductor processing includes forming a first dielectric layer comprising an N-type dopant over a first plurality of fins extending above a first region of a substrate, forming a second dielectric layer comprising a P-type dopant over the first plurality of fins and a second plurality of fins extending above a second region of the substrate, the second dielectric layer overlying the first dielectric layer, and forming an isolation layer between adjacent ones of the first plurality of fins, and between adjacent ones of the second plurality of fins. The method further includes performing an implantation process using a first dopant, the implantation process changing an etching rate of the isolation layer, and recessing the isolation layer, the first dielectric layer, and the second dielectric layer, where after the recessing, the first and the second plurality of fins extend above an upper surface of the isolation layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Flowable CVD quality control in STI loop","description":"A method for semiconductor processing includes forming a first dielectric layer comprising an N-type dopant over a first plurality of fins extending above a first region of a substrate, forming a seco","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9824937","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9824937","citation_suggestion":"Patentable. \"Flowable CVD quality control in STI loop\" (US-9824937). https://patentable.app/patents/US-9824937","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9824937","json":"https://patentable.app/api/llm-context/US-9824937","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:32:06.818Z"}