{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9824987","patent":{"patent_number":"US-9824987","title":"Semiconductor structure with composite barrier layer under redistribution layer and manufacturing method thereof","assignee":null,"inventors":[],"filing_date":"2016-07-07T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L","H01L"],"num_claims":20,"abstract":"A mechanism of a semiconductor structure with composite barrier layer under redistribution layer is provided. A semiconductor structure includes a substrate comprising a top metal layer on the substrate; a passivation layer over the top metal layer having an opening therein exposing the top metal layer; a composite barrier layer over the passivation layer and the opening, the composite barrier layer includes a center layer, a bottom layer, and an upper layer, wherein the bottom layer and the upper layer sandwich the center layer; and a redistribution layer (RDL) over the composite barrier layer and electrically connecting the underlying top metal layer."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor structure with composite barrier layer under redistribution layer and manufacturing method thereof","description":"A mechanism of a semiconductor structure with composite barrier layer under redistribution layer is provided. A semiconductor structure includes a substrate comprising a top metal layer on the substra","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9824987","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9824987","citation_suggestion":"Patentable. \"Semiconductor structure with composite barrier layer under redistribution layer and manufacturing method thereof\" (US-9824987). https://patentable.app/patents/US-9824987","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9824987","json":"https://patentable.app/api/llm-context/US-9824987","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T11:17:58.959Z"}