{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9825031","patent":{"patent_number":"US-9825031","title":"Methods of forming a high-k contact liner to improve effective via separation distance and the resulting devices","assignee":null,"inventors":[],"filing_date":"2016-08-05T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":16,"abstract":"A method includes forming first and second contact openings in a first dielectric layer. At least the first contact opening is at least partially lined with a liner layer. A first conductive feature is formed in the first contact opening and a second conductive feature is formed in the second contact opening. A portion of the liner layer adjacent a top surface of the first dielectric layer is removed to define a recess. A barrier layer is formed above the first dielectric layer and in the recess. The barrier layer has a first dielectric constant greater than a second dielectric constant of the first dielectric layer. A second dielectric layer is formed above the barrier layer. A third conductive feature is formed embedded in the second dielectric layer and contacting the second conductive feature."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Methods of forming a high-k contact liner to improve effective via separation distance and the resulting devices","description":"A method includes forming first and second contact openings in a first dielectric layer. At least the first contact opening is at least partially lined with a liner layer. A first conductive feature i","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9825031","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9825031","citation_suggestion":"Patentable. \"Methods of forming a high-k contact liner to improve effective via separation distance and the resulting devices\" (US-9825031). https://patentable.app/patents/US-9825031","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9825031","json":"https://patentable.app/api/llm-context/US-9825031","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T10:22:39.059Z"}