{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9825035","patent":{"patent_number":"US-9825035","title":"Integrated circuit having a vertical power MOS transistor","assignee":null,"inventors":[],"filing_date":"2017-01-23T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A device includes a vertical transistor comprising a first buried layer over a substrate, a first well over the first buried layer, a first gate in a first trench, wherein the first trench is formed partially through the first buried layer, and wherein a dielectric layer and the first gate are in the first trench, a second gate in a second trench, wherein the second trench is formed partially through the first buried layer, and wherein the second trench is of a same depth as the first trench, a first drain/source region and a second drain/source region formed on opposite sides of the first trench and a first lateral transistor comprising a second buried layer formed over the substrate, a second well over the second buried layer and drain/source regions over the second well."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Integrated circuit having a vertical power MOS transistor","description":"A device includes a vertical transistor comprising a first buried layer over a substrate, a first well over the first buried layer, a first gate in a first trench, wherein the first trench is formed p","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9825035","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9825035","citation_suggestion":"Patentable. \"Integrated circuit having a vertical power MOS transistor\" (US-9825035). https://patentable.app/patents/US-9825035","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9825035","json":"https://patentable.app/api/llm-context/US-9825035","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T15:30:12.383Z"}