{"schema_version":"1.0","canonical_url":"https://patentable.app/patents/US-9825043","patent":{"patent_number":"US-9825043","title":"Semiconductor devices and methods of manufacture thereof","assignee":null,"inventors":[],"filing_date":"2016-07-22T00:00:00.000Z","publication_date":"2017-11-21T00:00:00.000Z","cpc_codes":["H01L","H01L","H01L"],"num_claims":20,"abstract":"A method of forming an SRAM cell includes forming a first vertical pull-down transistor, a second vertical pull-down transistor, a first vertical pass-gate transistor, and a second vertical pass-gate transistor over a semiconductor substrate. The method includes forming a first conductive trace over a top surface of the first vertical pull-down transistor and the first vertical pass-gate transistor, forming a second conductive trace over a top surface of the second vertical pull-down transistor and the second vertical pass-gate transistor, and forming a first vertical pull-up transistor over a first portion of the first conductive trace. The method also includes forming a second vertical pull-up transistor over a first portion of the second conductive trace. The method also includes forming a first via over the first conductive trace and forming a second via over the second conductive trace."},"analysis":{"summary":null,"layman_explanation":null,"technical_analysis":null,"business_analysis":null,"faqs":null,"topics":[],"tech_cluster":null},"seo":{"title":"Semiconductor devices and methods of manufacture thereof","description":"A method of forming an SRAM cell includes forming a first vertical pull-down transistor, a second vertical pull-down transistor, a first vertical pass-gate transistor, and a second vertical pass-gate ","keywords":[]},"attribution":{"source":"Patentable","source_url":"https://patentable.app","canonical_url":"https://patentable.app/patents/US-9825043","license":"CC-BY-4.0-like","license_terms":"AI-generated analysis on this page (summary, layman_explanation, technical_analysis, business_analysis, faqs) may be reused with attribution and a visible link back to the canonical URL above. Patent abstracts, claims, and bibliographic data are USPTO public domain.","required_link":"https://patentable.app/patents/US-9825043","citation_suggestion":"Patentable. \"Semiconductor devices and methods of manufacture thereof\" (US-9825043). https://patentable.app/patents/US-9825043","copyright_holder":"Nomic Interactive Technology LLC"},"links":{"html":"https://patentable.app/patents/US-9825043","json":"https://patentable.app/api/llm-context/US-9825043","site":"https://patentable.app","llms_txt":"https://patentable.app/llms.txt"},"generated_at":"2026-06-06T14:01:16.419Z"}